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Studies on conventional and Sankaranarayanan–Ramasamy (SR) method grown ferroelectric glycine phosphite (GPI) single crystals

M. Senthil Pandian & N. Pattanaboonmee & P. Ramasamy & P. Manyum
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Journal of Crystal Growth, 314 + (2010) 207-212. doi:10.1016/j.jcrysgro.2010.11.093
Tahun:
2010
Penerbit:
Elsevier
Bahasa:
english
Fail:
PDF, 1.47 MB
IPFS:
CID , CID Blake2b
english, 2010
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Istilah utama

 
gpi
grown
crystal
method
growth
dielectric
crystals
conventional
boundaries
laser
ramasamy
threshold
inclusions
observed
defects
temperature
cryst
dislocations
pandian
senthil
hardness
etch
etching
angle
glycine
grain
microhardness
solution
ampoule
directed
journal
optical
phosphite
solvent
analysis
axis
å
damaged
mater
permittivity
phys
sankaranarayanan
shows
vickers
chemical
density
diameter
evaporation
indentation
measurements
transmittance
cm2
cracks
e13
epd
ferroelectric
indicates
ldt
mm2
orientation